Search results for "Anodic thin film"

showing 1 items of 1 documents

Electrochemical Tantalum Oxide for Resistive Switching Memories

2017

Redox-based resistive switching memories (ReRAMs) are strongest candidates for the next-generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta2O5-based devices by anodizing. This method allows to grow high-quality and dense oxide thin films onto a metal…

Materials scienceReRAMOxide02 engineering and technologyElectrolyte010402 general chemistry01 natural scienceschemistry.chemical_compoundmultilevelDispersion (optics)General Materials ScienceMechanics of MaterialThin filmAnodic thin filmbusiness.industryAnodizingresistive switchingMechanical EngineeringNanosecond021001 nanoscience & nanotechnology0104 chemical sciencesSettore ING-IND/23 - Chimica Fisica ApplicatachemistryNeuromorphic engineeringMechanics of MaterialsLogic gateOptoelectronicsMaterials Science (all)0210 nano-technologybusinesstantalum oxide
researchProduct